| PART |
Description |
Maker |
| 2SJ557 2SJ557-T2B 2SJ557-T1B |
Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC[NEC]
|
| UPA1980 UPA1980TE UPA1980TE-T2 UPA1980TE-T1 |
Pch enhancement-type MOS FET (SBD)
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1870GR-9JG UPA1870 UPA1870GR-9JG-E1 UPA1870GR-9 |
N-channel enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
TRANSISTOR | MOSFET | HALF BRIDGE | 20V V(BR)DSS | 6A I(D) | SO
|
NEC[NEC]
|
| 2SK2157 D11233EJ1V0DS00 2SK2157-T1 2SK2157-T2 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING N沟道场效应晶体管的高速开
From old datasheet system
N-channel MOS type field effect transistor
|
NEC, Corp.
NEC[NEC]
|
| UPA1872 UPA1872GR-9JG UPA1872GR-9JG-E1 UPA1872GR-9 |
N-channel enhancement type MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC[NEC]
|
| 2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| RD06HVF1-101 RD06HVF1 |
MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RD100HHF1 |
MOS FET type transistor specifically designed for HF High power amplifiers applications.
|
Mitsubishi Electric Semiconductor
|
| MP4203 |
TOSHIBA POWER MOS FET MODULE SILICON P CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
| 2SK1739 |
N CHANNEL MOS TYPE (RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER)
|
Toshiba Semiconductor
|
| MP4703 |
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
|
ETC[ETC]
|
